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HiPerFET TM
Power MOSFETs
Single Die MOSFET
IXFE 44N60
V DSS
I D25
R DS(on)
=
=
=
600 V
41 A
130 m ?
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t rr
Preliminary data sheet
G
S
D
S
t rr ≤ 250 ns
Symbol
Test Conditions
Maximum Ratings
ISOPLUS 227 TM (IXFE)
V DSS
V DGR
V GS
V GSM
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
Transient
600
600
± 20
± 30
V
V
V
V
G
S
I D25
I DM
I AR
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
41
176
44
A
A
A
G = Gate
D
D = Drain
S
E AR
E AS
dv/dt
P D
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 2 ?
T C = 25 ° C
60
3
5
500
mJ
J
V/ns
W
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
T J
T JM
T stg
T J
V ISOL
M d
Weight
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I ISOL ≤ 1 mA t=1s
Mounting torque
Terminal connection torque
-55 ... +150 ° C
150 ° C
-55 ... +150 ° C
- ° C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
19
g
Features
? Conforms to SOT-227B outline
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
rated
? Low package inductance
? Fast intrinsic Rectifier
Symbol
V DSS
Test Conditions
V GS = 0 V, I D = 3 mA
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
600 V
Applications
? DC-DC converters
? Battery chargers
? Switched-mode and resonant-mode
power supplies
? DC choppers
? Temperature and lighting controls
V GH(th)
V DS = V GS , I D = 8 mA
2.5
4.5
V
I GSS
I DSS
R DS(on)
V GS = ± 20 V DC , V DS = 0
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = I T
Note1
T J = 25 ° C
T J = 125 ° C
± 200 nA
100 μ A
2 mA
130 m ?
Advantages
? Low cost
? Easy to mount
? Space savings
? High power density
? 2002 IXYS All rights reserved
98894 (1/02)
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